2SA 1295 (CHINA).
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2SA1302 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SA1302 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 150 W Maximum Collector-Base Voltage Vcb : 200 V Maximum Collector-Emitter Voltage Vce : 200 V Maximum Emitter-Base Voltage Veb : 5 V Maximum Collector Current Ic max : 15 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 30 MHz Collector Capacitance (Cc): 470 pF Forward Current Transfer Ratio (hFE), MIN: 55 Noise Figure, dB: - Package: X104-1.
Cross-Reference Search 2SA1302 Datasheet (PDF) 1.1. Size:114K mospec A A A 1.2. Size:219K jmnic JMnic Product Specification Silicon PNP Power Transistors 2SA1302 DESCRIPTION With TO-3PL package Complement to type 2SC3281 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 1.3. Size:128K inchangesemiconductor INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1302 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage-: V(BR)CEO= -200V(Min) Complement to Type 2SC3281 APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage applicatio.